News about the new JEOL 2010F Analytical Electron Microscope

The microscope has been shipped from the factory in Akasima, Japan and has arrived in the USA.

It was delivered to New York on the 3rd of Janurary 2000 and was stored in a Customs warehous pending the unravelling of some problems involving Customs documents (if you want something done right, do it yourself).

On the 9th of February 2000, the Customs Clearance documents were delivered to John Mansfield who immediately forwarded them on to JEOL, Boston.

The instrument should take about 1 week to clear customs and between three and four days to travel to Ann Arbor.

The JEOL 2000FX will be decommissioned beginning on the 14th of February 2000 and it will be unavailable from that day. This make room for the new instrument and allow the room to be prepared.

When the installation is complete then each user will need to be trained on the use of the new instrument. One-on-one and group training sessions will be available depending upon the individual users application.

This page will be updated as we have further information. Send John Mansfield an E-mail for further information and insight.

Analytical Electron Microscopy Analytical Electron Microscopy is a generic term that is applied to any study where a variety of analysis techniques are used within one particular microscope. These techniques typically include X-ray Energy Dispersive Spectroscopy (XEDS), Electron Energy Loss Spectroscopy (EELS), Selected Area Electron Diffraction (SAED), Convergent Beam Electron Diffration (CBED), Scanning Transmission Electron Microscopy, and Scanning Electron Microscopy. These techniques are briefly described in the glossary.

Applications: XEDS, Parallel EELS, Imaging Filter, SAED, CBED, STEM, HAADF STEM, HREM, Diffraction Contrast Imaging Accelerating Voltage: 0 to 200 kV (50 V steps) Filament: Zirconated Tungsten (100) thermal field emission tip Vacuum: ~1.5 x10^-7 torr Resolution: CTEM 0.10 nm lattice / 0.25 nm point-to-point STEM 0.17 nm HAADF (high angle annular dark field) XEDS System: Horizontal Ultra-thin Window Si-Li X-ray detector (active area = 30 mm^2) capable of detecting elements with Z >5. EDAX r-TEM Detector with EDAX acquisition software EELS System: Gatan Imaging Filter (GIF) for electron energy loss spectroscopy and imaging. Image Acquisition & Analysis System: Gatan #794 cooled multi-scan CCD TV camera for high resolution imaging (above the GIF) Gatan #692 Retractable TV rate CCD TV camera.. Sample Holders: JEOL Single-Tilt Stage JEOL Double-Tilt Analytical Stage Gatan #646 Double-Tilt (x=±35 degrees, y=±35 degrees) Low Background (Be) Stage with Faraday cup. Gatan #636 Double-Tilt (x=±35 degrees, y=±35 degrees) Low Background (Be) Liquid-Nitrogen Stage. Gatan #652 Double-Tilt Heating Holder with a maximum operating temperature of 1000 degrees Celsius. Other Accesories: Free lens control, fully independent control of all lenses. FasTEM remote NT server based control system.