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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

Dr. Haiping Sun

John Mansfield

Research Associate (North Campus)

Address:
Electron Microbeam Analysis Laboratory (North Campus)
University of Michigan
Building 22, Room G011A
2800 Plymouth Road
Ann Arbor, MI 48109-2800

E-mail: haipings@umich.edu
Phone: (734) 936-3338
Fax:(734) 764-2931

Contact me for:
TEM, STEM, SEM, FIB.
Equipment training and problems in EMAL.

Schedule
My normal schedule is 8:30 AM to 12:00 and 1:00 PM to 5:30 PM Monday through Friday.

How to get training
E-mail me or call me to set up a training session for any of the instruments listed above. You should include in your email some information on your sample and what it is you are trying to discover. You shoudl also tell me if you have any prior experience in the technique that you believe is applicable. Training usually takes a couple of hours for the SEM. The TEMs are more specialized and can take much longer. For example, to become familiar with the TEM, we recommend you take the Electron Microscopy course, MSE-562, offered in the winter term by the Materials Science and Engineering Department. This course includes a large lab component in addition to theory on the operation of the microscope.