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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

Cameca CAMEBAX Electron Microprobe Analyzer 4 Spectrometers

Location: 2501B C. C. Little Building
Contact: Gordon Moore

Electron Microprobe Analyzer: This instrument is designed for quantitative microanalysis using both wavelength and energy dipersive X-ray spectrometry. Samples may be imaged by light optics (transmitted and reflected light) or electron optics (secondary and backscattered electrons and sample current mode) to determine the desired locations for analysis.

Applications

Accelerating Voltages

Filament

Vacuum

SEM Resolution

WDS System

Stage Control

XEDS System

Additional Features

Cameca Camebax EPMA David Borrok, a graduate student in Geological Sciences operating the Cameca CAMEBAX Electron Microprobe Analyzer