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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

Cameca SX-100 Electron Microprobe Analyzer

Location: 2501B C. C. Little Building
Contact: Gordon Moore
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of NSF grant #EAR-9911352.

Electron Microprobe Analyzer: The instrument utilizes both tungsten and cerium hexaboride sources between 0 and 50 keV and has five vertical wavelength-dispersive spectrometers with a full range of crystal types. The system is extensively computer controlled by both Unix and PC workstations. Other analysis techniques that are available on the instrument compliment the electron microprobe functions and include: a Röntec silicon-drift X-ray energy dispersive spectrometer, secondary electron, backscattered electron and absorbed current imaging and transmitted and reflected light imaging. Cathodoluminescence spectroscopy and imaging experiments are also possible.

Applications

Accelerating Voltages

Filament

Vacuum

SEM Resolution

WDS System

Stage Control

XEDS System

Additional Features

Cameca SX100 EPMA Artur Deditius, a post-doctoral researcher in the Department of Geological Sciencesoperates the Cameca SX-100 Microprobe Analyzer.