EMAL | Facilities & Instruments

Si Map on Semiconductor Chip

An X-ray energy dispersive spectormetry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

O Map on Semiconductor Chip
An X-ray energy dispersive spectormetry map recorded using the Oxygen K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield
BF and DF pair of Gamma/Gamma'
Transmission electron microscope bright field (left) and dark field (right) image pair of a thin film of a gamma/gamma' nickel based superalloy.

Image by EMAL Staff
SEM CdTe Nanotube Rosette
Scanning electron microscope image a cluster of nanotubes of cadmium telluride.

Image by John Mansfield
Carbon Nanotubes Modified with an Ultrafast Laser
High magnification SEM image of a carbon nanotube mat modified by shots from a femtosecond laser. Accelerating voltage 2kV.

Image by John Mansfield
Soot particles on a holey caron film
TEM image of soot particles on a holey carbon support film.

Image by EMAL Staff

Si Map on Semiconductor Chip

An X-ray energy dispersive spectormetry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

The Hitachi S3200N Scanning Electron Microscope

Location: 2501B C. C. Little Building
Contact: Carl Henderson

Scanning Electron Microscopy: The Hitachi S3200N Scanning Electron Microscope is one of a new series of Variable Pressure Scanning Electron Microscopes (VPSEM). The VPSEM is a conventional high resolution thermionic SEM which allows the operator to control the specimen chamber vacuum level and environment. A specimen maybe inserted directly into the VPSEM and observed in it's natural state.

Applications

Accelerating Voltages

0.3 to 30 kV

Filament

Tungsten

Vacuum

VP mode 1.3-270Pa

Detectors

Imaging - Everhart-Thornley & Robinson BSE Detectors
XEDS - Noran UTW SiLi detector

Magnification

20 - 300,000x

SEM Resolution

High Vacuum Mode 3.5 nm
Low Vacuum Mode 5.5nm

Denette Murphy, a graduate student in Biology, operating the Hitachi S3200N SEM.

Si Map on Semiconductor Chip

O Map on Semiconductor Chip

BF and DF pair of Gamma/Gamma'

SEM CdTe Nanotube Rosette

Carbon Nanotubes Modified with an Ultrafast Laser

Soot particles on a holey caron film

Si Map on Semiconductor Chip

The Hitachi S3200N Scanning Electron Microscope