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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

Cameca LEAP 4000X HR Atom Probe Instrument

Location: Room G017, Building 22 of The North Campus Research Complex
Phone: +1-(734) 764-2934.
Contact: John Mansfield or Emmanuelle Marquis
Instructions:
Webcam: Cameca LEAP Webcam
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of the University of Michigan College of Engineering

Aton Probe Tomography: For further information on this technique see Cameca's website and EMAL's techniques glossary.

Applications

Vacuum

Voltage Mode

Laser Mode

About the Technique

Cameca LEAP HR
Cameca LEAP HR The EMAL Cameca LEAP 4000X HR installed in EMAL@NCRC.