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Si Map on Semiconductor Chip

An X-ray energy dispersive spectrometry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

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Si Map on Semiconductor Chip

An X-ray energy dispersive spectrometry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

Bruker D8 Discover X-ray Diffractometer with a General Area Detector Diffraction System (GADDS)

Location: Room 2219 H.H. DowBuilding
Contact: Ying Qi
Instructions: Bruker Discover D8 SOP
Acknowledgments:Publications resulting from work on this instrument should acknowledge

Bruker D8 Discover X-ray Diffractometer with a General Area Detector Diffraction System (GADDS): This system is available in a variety of configurations to fulfill requirement of different applications and samples. It’s flexible with samples size and sample amounts, inhomogeneous or oriented sample of complex shape geometry. With 2-D HighStar detector it needs very short measuring time. Typical applications include microdiffraction, phase ID, stress analysis and X-Y mapping.

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Bruker D8 XRD Professor Yalisove and Teaching Assistant Jiaoshi Miao, of the Department of Materials Science and Engineering, are demonstrating and comparing polycrystalline sample diffraction and single crystal sample diffraction on D8 discover XRD for a class of MSE465 Students.