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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

FEI Helios Nanolab 650 Dualbeam Focussed Ion Beam Workstation and Scanning Electron Microscope

Location: Room G025, Building 22 of The North Campus Research Complex
Phone: +1-(734) 764-2946.
Contact: John Mansfield , Kai Sun or Haiping Sun
Instructions: Helios NanoLab Online Documentation
Webcam: Helios NanoLab Webcam
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of the University of Michigan College of Engineering

Applications

Accelerating Voltage

Beam Current

Electron Filament

Vacuum

Detectors

SEM Resolution

Ion Resolution

XEDS System & EBSD

Gas Injectors

Micromanipulator (plucker)

Included Software

Specimen Preparation Papers of Interest to Users

FEI Helios NanoLab The Helios NanoLab Dualbeam FIB in EMAL@NCRC.