FEI Quanta 200 3D Focussed Ion Beam Workstation and Environmental Scanning Electron Microscope
Location: 426 Space Research Building
Contact: John Mansfield or Kai Sun or Haiping Sun
Instructions: Quanta 3D User's Operation Manual and TEM Cross Section Preparation on the Quanta 3D
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of NSF grant #DMR-0320740
Environmental Scanning Electron Microscopy: Although an Environmental Scanning Electron Microscope produces a scanned image similar to that of a regular scanning electron microscope, the environment of the sample chamber and the method of detecting the secondary electron signal are novel. The sample chamber is held at a pressure of typically between 1-20 torr.
Applications
- FIB, SEM, XEDS
Accelerating Voltage
- Electrons: 0.2 to 30 kV
- Ions: Upto 30kV
Electron Filament
- Tungsten Hairpin
Vacuum
- Gun Chamber: torr
- Specimen Chamber:
Detectors
- Imaging - Gaseous Environmental Secondary Detector (GSED)
- Imaging - Everhart-Thornley Detector (SED)
- Imaging - Environmental BackScatter Detector
- X-ray - Noran UTW XEDS Detector with 4Pi analysis system (to be installed)
SEM Resolution
- 3.5nm @ 30kV at high vacuum
- 3.5nm @30kV in ESEM mode
- 15nm @ 3kV in low vacuum mode
Ion Resolution
- 10nm @ 30kV @ 1pA
XEDS System
- Noran Norvar 30 mm^2 detector, atmospheric UTW detector, capable of detecing elements with Z >5.
- XEDS system: 4Pi Analysis Spectral Engine installed in Apple Macintosh computer.
- Software: NIST DTSA.
Stages
- Hot Stage, capable of operating from room temperature to 1000 degrees Celsius.
- Peltier Cooling Stage, operates from room temperature to ~-50 degrees Celsius.
Micromanipulator (plucker)
- Omniprobe 100.5
Included Software
- AutoFIB, AutoTEM, Slice and View and XtDocu
Specimen Preparation Papers of Interest to FIB Users
- H-bar technique - "Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering."
R. Hull, D. Bahnck, F. A. Stevie, L. A. Koszi, and S. N. G. Chu - App. Phys. Lett., Vol. 62, No. 26, 28 June 1993. - H-bar technique - "In Situ Studies of the Interaction of Dislocations withPoint Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures."
Eric A. Stach, Robert Hull, John C. Bean, Kevin S. Jones and Ahmed Nejim - Microsc. Microanal. 4, 294 - 307, 1998.
Application Notes for ESEM
- A Dandelion Seed Head - An example of some of the unusual samples that may be examined in the Environmental Scanning Electron Microscope.
Dr. Hugh MacKay, a Post-Doctoral Research Fellow in the Department of Materials Science and Engineeering, demonstrating the use and possible applicatiosn of the Quanta 3D dualbeam FIB to Professor Joanna Mirecki Millunchick's MSE 465 class.