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Si Map on Semiconductor Chip

An X-ray energy dispersive spectrometry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

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Si Map on Semiconductor Chip

An X-ray energy dispersive spectrometry map recorded using the Silicon K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.

Image by John Mansfield

FEI Quanta 200 3D Focussed Ion Beam Workstation and Environmental Scanning Electron Microscope

Location: 422 Space Research Building
Contact: John Mansfield or Kai Sun or Haiping Sun
Instructions: Quanta 3D User's Operation Manual and TEM Cross Section Preparation on the Quanta 3D
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of NSF grant #DMR-0320740

Environmental Scanning Electron Microscopy: Although an Environmental Scanning Electron Microscope produces a scanned image similar to that of a regular scanning electron microscope, the environment of the sample chamber and the method of detecting the secondary electron signal are novel. The sample chamber is held at a pressure of typically between 1-20 torr.

Applications

Accelerating Voltage

Electron Filament

Vacuum

Detectors

SEM Resolution

Ion Resolution

XEDS System

Stages

Micromanipulator (plucker)

Included Software

Specimen Preparation Papers of Interest to FIB Users

Application Notes for ESEM

FEI Quanta 3D Dr. Hugh MacKay, a Post-Doctoral Research Fellow in the Department of Materials Science and Engineeering, demonstrating the use and possible applicatiosn of the Quanta 3D dualbeam FIB to Professor Joanna Mirecki Millunchick's MSE 465 class.