FEI Quanta 200 3D Focussed Ion Beam Workstation and Environmental Scanning Electron Microscope
Location: 422 Space Research Building
Contact: John Mansfield or Kai Sun or Haiping Sun
Instructions: Quanta 3D User's Operation Manual and TEM Cross Section Preparation on the Quanta 3D
Acknowledgments: Publications resulting from work on this instrument should acknowledge the support of NSF grant #DMR-0320740
Environmental Scanning Electron Microscopy: Although an Environmental Scanning Electron Microscope produces a scanned image similar to that of a regular scanning electron microscope, the environment of the sample chamber and the method of detecting the secondary electron signal are novel. The sample chamber is held at a pressure of typically between 1-20 torr.
- FIB, SEM, XEDS
- Electrons: 0.2 to 30 kV
- Ions: Up to 30kV
- Tungsten Hairpin
- Gun Chamber: torr
- Specimen Chamber:
- Imaging - Gaseous Environmental Secondary Detector (GSED)
- Imaging - Everhart-Thornley Detector (SED)
- Imaging - Environmental BackScatter Detector
- X-ray - Noran UTW XEDS Detector with 4Pi analysis system (to be installed)
- 3.5nm @ 30kV at high vacuum
- 3.5nm @30kV in ESEM mode
- 15nm @ 3kV in low vacuum mode
- 10nm @ 30kV @ 1pA
- EDAX 30 mm^2 SDD detector, capable of detecing elements with Z >5.
- XEDS system: EDAX Genesis System with Spectral, Image and Spectrum image acquisition.
- Off line Software: EDAX and NIST DTSA-II.
- Hot Stage, capable of operating from room temperature to 1000 degrees Celsius.
- Peltier Cooling Stage, operates from room temperature to ~-50 degrees Celsius.
- Omniprobe 100.5
- AutoFIB, AutoTEM, Slice and View and XtDocu
Specimen Preparation Papers of Interest to FIB Users
- H-bar technique - "Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering."
R. Hull, D. Bahnck, F. A. Stevie, L. A. Koszi, and S. N. G. Chu - App. Phys. Lett., Vol. 62, No. 26, 28 June 1993.
- H-bar technique - "In Situ Studies of the Interaction of Dislocations withPoint Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures."
Eric A. Stach, Robert Hull, John C. Bean, Kevin S. Jones and Ahmed Nejim - Microsc. Microanal. 4, 294 - 307, 1998.
Application Notes for ESEM
- A Dandelion Seed Head - An example of some of the unusual samples that may be examined in the Environmental Scanning Electron Microscope.