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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

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Dislocations in a strained InGaAs film

Weak beam dark-field TEM image of threading dislocation in a strained InGaAs film grown on GaAs. TEM image recorded on the JEOL 3011 HREM.

Image by Kevin Grossklaus, Millunchick Research Group

Philips XL30 FEG

Location: 425 Space Research Building
Contact: John Mansfield or Kai Sun
Instructions: Philips XL30FEG PDF Handbook
Acknowledgments: This instrument was funded from a variety of sources, but the largest portion of the funds came from an AFSOR MURI headed by Ron Gibala (DOD-G-F49620-93-1-0289, Center for Advanced Structural Metallic Materials). Other monies were provided by the College of Engineering and the Department of Materials Science and Engineering.

Scanning Electron Microscopy: The Philips XL30 Scanning Electron Microscope (SEM) is one of a generation of SEMs that is completely controlled from a computer workstation. The XL series instruments are controlled by a personal computer running Microsoft Windows NT. The EMAL instrument employs a thermally assisted Schottky field emission gun for high intensity probe formation. This makes the instrument ideal for both imaging and microanalysis.

Applications

Accelerating Voltage

Filament

Vacuum

Dectectors

Magnification

SEM Resolution

Sample Requirements

SEM Class Lecture Notes

Flash Animations

Philips XL30FEG Muralidharan Ramachandran, a PhD student in the Department of Chemical and Environmental Engineering at the University of Toledo, working in the group of Abdul-Majeed Azad. He is examining the compositions of novel ceramics for use as solid electrolytes in intermediate temperature-solid oxide fuel cells (IT-SOFC) with the XL30FEG SEM.