North Campus Instruments - FEI Quanta 200 3D Focussed Ion Beam Workstation and Environmental Scanning Electron Microscope

Applications

FIB, SEM, XEDS

Accelerating Voltage

Electrons: 0.2 to 30 kV Ions: Up to 30kV

Filament

Tungsten Hairpin

Vacuum

Gun Chamber: torr Specimen Chamber:

Dectectors

Imaging - Gaseous Environmental Secondary Detector (GSED) Imaging - Everhart-Thornley Detector (SED) Imaging - Environmental BackScatter Detector X-ray - Noran UTW XEDS Detector with 4Pi analysis system (to be installed)

SEM Resolution

3.5nm @ 30kV at high vacuum 3.5nm @30kV in ESEM mode <15nm @ 3kV in low vacuum mode.

Ion Resolution

10nm @ 30kV @ 1pA

XEDS System

Noran Norvar 30 mm^2 detector, atmospheric UTW detector, capable of detecing elements with Z >5. XEDS system: 4Pi Analysis Spectral Engine installed in Apple Macintosh computer. Software: NIST DTSA.

Stages

Hot Stage, capable of operating from room temperature to 1000 degrees Celsius. Peltier Cooling Stage, operates from room temperature to ~-50 degrees Celsius.

Micromanipulator (plucker)

Omniprobe 100.5

Dr. Hugh MacKay, a Post-Doctoral Research Fellow in the Department of Materials Science and Engineeering, demonstrating the use and possible applicatiosn of the Quanta 3D dualbeam FIB to Professor Joanna Mirecki Millunchick's MSE 465 class. Environmental Scanning Electron Microscopy Although an Environmental Scanning Electron Microscope produces a scanned image similar to that of a regular scanning electron microscope, the environment of the sample chamber and the method of detecting the secondary electron signal are novel. The sample chamber is held at a pressure of typically between 1-20 torr. Specimen Preparation Papers of Interest to FIB Users H-bar technique - "Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering." R. Hull, D. Bahnck, F. A. Stevie,a) L. A. Koszi, and S. N. G. Chu - App. Phys. Lett., Vol. 62, No. 26, 28 June 1993 H-bar technique - "In Situ Studies of the Interaction of Dislocations withPoint Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures." Eric A. Stach, Robert Hull, John C. Bean, Kevin S. Jones and Ahmed Nejim - Microsc. Microanal. 4, 294–307, 1998.